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Request an Instant Quote for Part 5812751P9 of Bae Systems Information And Electronic Systems Integration Inc with NSN 5962012546235

Part Number: 5812751P9

NIIN : 012546235

Item Name : Microcircuit Memory

Manufacturer: Bae Systems Information And Electronic Systems Integration Inc

CAGE Code : 94117

NSN : 5962-01-254-6235

FSC : FSC 5962 Microcircuits Electronic

If you are in need of parts such as 5812751P9 described as Microcircuit Memory from Bae Systems Information And Electronic Systems Integration Inc, look no further than ASAP Inventory. As a wholly-owned subsidiary of ASAP Semiconductor, we have access to an inventory of more than two billion new and obsolete parts and components such as 5812751P9 and many more. ASAP Inventory is an AS9120B, ISO 9001:2015, and FAA AC 00-56B accredited business, and the only independent distributor with a strict No China Sourcing Pledge, guaranteeing that each part you purchase from us is fully traceable or comes directly from the manufacturer. Anything not in our inventory can be tracked down and shipped to you with short lead times and competitive prices through our vast and diverse international supply chain network that spans North America and Europe. 5812751P9

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NSN Information for Part Number 5812751P9 with NSN 5962-01-254-6235, 5962012546235

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-254-6235 Item Description: Microcircuit Memory	5962	012546235	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	G	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
5812751p9	5	2	3

Characteristics Data of NSN 5962-01-254-6235, 5962012546235

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 970 INCHES MINIMUM AND 1 010 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 280 INCHES MINIMUM AND 0 300 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 155 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 02 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDPROGRAMMABLE AND SCHOTTKY AND MONOLITHIC AND BIPOLAR AND 3-STATE OUTPUT AND HIGH IMPEDANCE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN10 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTGOLD
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	PMLC	PRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACES OPTION GOLD
MEMORY	PRMT	PRECIOUS MATERIALGOLD
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT

Corresponding National Stock Number to 5812751P9

581-00	581-00-00-055	581-00-00-100	581-00-00-101
581-0001	581 0007	581-0008	581-0009
581-000C0Z0-560F	581-000C0Z0-560F	581-000C0Z0-560F	581-001
581-001	581-002-00	581-0025-02	581-0027-02
581-0027-02	581-0027-02	581 0028 02	581-0083-02