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Request an Instant Quote for Part 5807811P42 of Bae Systems Information And Electronic Systems Integration Inc with NSN 5962012140930

Part Number: 5807811P42

NIIN : 012140930

Item Name : Microcircuit Memory

Manufacturer: Bae Systems Information And Electronic Systems Integration Inc

CAGE Code : 94117

NSN : 5962-01-214-0930

FSC : FSC 5962 Microcircuits Electronic

If you are in need of parts such as 5807811P42 described as Microcircuit Memory from Bae Systems Information And Electronic Systems Integration Inc, look no further than ASAP Inventory. As a wholly-owned subsidiary of ASAP Semiconductor, we have access to an inventory of more than two billion new and obsolete parts and components such as 5807811P42 and many more. ASAP Inventory is an AS9120B, ISO 9001:2015, and FAA AC 00-56B accredited business, and the only independent distributor with a strict No China Sourcing Pledge, guaranteeing that each part you purchase from us is fully traceable or comes directly from the manufacturer. Anything not in our inventory can be tracked down and shipped to you with short lead times and competitive prices through our vast and diverse international supply chain network that spans North America and Europe. 5807811P42

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NSN Information for Part Number 5807811P42 with NSN 5962-01-214-0930, 5962012140930

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-214-0930 Item Description: Microcircuit Memory	5962	012140930	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
5807811p42	2	2	5

Characteristics Data of NSN 5962-01-214-0930, 5962012140930

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 840 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING739 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONRECEIVING SETCOUNTERMEASURES ANSLR-16A
MEMORY	CBBL	FEATURES PROVIDEDPROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND 3-STATE OUTPUT
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN6 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT

Corresponding National Stock Number to 5807811P42

580-0-002	580-0-002 REV A ITEM NO.13	580-00	580-00-11
580-00-11	580-000-504	580 000002 000	580-000002-001
580-000031-000	580 000034 000	580-000034-001	580-000039-000
580-000039-001	580-000040-003	580-000041-001	580-000062-000
580-000084-000	580-0002	580-0002	580-0003