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Request an Instant Quote for Part 15-1326286-1 of Advanced Micro Devices Inc with NSN 5962013757492

Part Number: 15-1326286-1

NIIN : 013757492

Alternate P/N: 1513262861

Item Name : Microcircuit Memory

Manufacturer: Advanced Micro Devices Inc

CAGE Code : 34335

NSN : 5962-01-375-7492

FSC : FSC 5962 Microcircuits Electronic

If you are in need of parts such as 15-1326286-1 described as Microcircuit Memory from Advanced Micro Devices Inc, look no further than ASAP Inventory. As a wholly-owned subsidiary of ASAP Semiconductor, we have access to an inventory of more than two billion new and obsolete parts and components such as 15-1326286-1 and many more. ASAP Inventory is an AS9120B, ISO 9001:2015, and FAA AC 00-56B accredited business, and the only independent distributor with a strict No China Sourcing Pledge, guaranteeing that each part you purchase from us is fully traceable or comes directly from the manufacturer. Anything not in our inventory can be tracked down and shipped to you with short lead times and competitive prices through our vast and diverse international supply chain network that spans North America and Europe. 15-1326286-1

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NSN Information for Part Number 15-1326286-1 with NSN 5962-01-375-7492, 5962013757492

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-375-7492 Item Description: Microcircuit Memory	5962	013757492	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
15-1326286-1	5	2	5

Characteristics Data of NSN 5962-01-375-7492, 5962013757492

MRC	Criteria	Characteristic
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	ADAU	BODY HEIGHT0 200 INCHES MINIMUM AND 0 220 INCHES MAXIMUM
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONHACRMPE REACT BASIC
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CRTL	CRITICALITY CODE JUSTIFICATIONFEAT
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC5 00 MICROAMPERES MAXIMUM INPUT
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 6 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY
MEMORY	CZER	MEMORY DEVICE TYPEEPROM
MEMORY	FEAT	SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSHARDNESS CRITICAL ITEM SELECTED ITEM SELECTED FROM PN 5962-8961404MXX OR 5962-8961405MXXCAGE 67268
MEMORY	ADAT	BODY WIDTH0 585 INCHES MINIMUM AND 0 605 INCHES MAXIMUM
MEMORY	CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROM128K X 8 27C010 MICROCIRCUITMEMORY DIGITALCMOS 128K X 8-BIT UVEPROMMONOLITHIC SILICON
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MINIMUM ACCESS AND 170 00 NANOSECONDS MAXIMUM ACCESS
MEMORY	CZZZ	MEMORY CAPACITY128K X 8
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT
MEMORY	ADAQ	BODY LENGTH1 660 INCHES MINIMUM AND 1 680 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING330 0 MILLIWATTS
MEMORY	CBBL	FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND RADIATION HARDENED AND ULTRAVIOLET ERASABLE AND TESTED TO MIL-STD-883 AND SELECTED ITEM
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	NHCF	NUCLEAR HARDNESS CRITICAL FEATUREHARDENED
MEMORY	SPCL	SPECIAL TEST FEATURESSELECTED AND TESTED FOR RADIATION HARDNESS

Corresponding National Stock Number to 15-1326286-1

15-0.125	15-0-4	15-0-4	15-0-4
15-0-4	15-0-48VDC	15-0-48VDC	15-0-50.0AMPDC
15-0-7500	15.0 BTDC	15 00 00	15-00-00070
15-00-00080	15-00-00930	15-00-00930	15-00-00930
15-00-01 85193	15-00-0100	15-00-01030	15-00-01030